kimia nt
عضو جدید
Simulation of statistical aspects of reliability in nano CMOS transistors
The evolution of the threshold voltage distribution in an ensemble of realistic n- and p- channel bulk MOSFETs caused by charge trapping on stress generated defect states at the Si/SiO2 interface due to NBTI/PBTI is studied using 3-D statistical simulations. The simulations take into account the underlying random discrete dopant distribution in the transistors, which in conjunction with strategically positioned traps, could result in rare but dramatic changes in the transistor characteristics. Read More»
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Advanced simulation of statistical variability and reliability in nano CMOS transistors
<LI class="noAbstract Hover" _counted="undefined" _eventID="162">Increasing CMOS device variability has become one of the most acute problems facing the semiconductor manufacturing and design industries at, and beyond, the 45 nm technology generation. Most problematic of all is the statistical variability introduced by the discreteness of charge and granularity of matter in transistors with features already of molecular dimensions . Two transistors next to each other on the chip with exactly the same geometries and strain distributions may have characteristics from each end of a wide statistical distribution. In conjunction with statistical variability [ii], negative bias temperature instability (NBTI) and/or hot carrier degradation can result in acute statistical reliability problems. It already profoundly affects SRAM design, and in logic circuits causes statistical timing problems and is increasingly leading to hard digital faults. In both cases, statistical variability restricts supply voltage scaling, adding to power dissipation problems [iii]. In this invited paper we describe recent advances in predictive physical simulation of statistical variability using drift diffusion (DD), Monte Carlo (MC) and quantum transport (QT) simulation techniques. Read More»
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<H3>On the performance limits of emerging nano-MOS transistors: A simulation study
<LI class="noAbstract Hover" _counted="undefined" _eventID="163">
<H3>A multi-level parallel simulation approach to electron transport in nano-scale transistors
</H3>
<LI class="noAbstract Hover" _counted="undefined" _eventID="163"><H3>Hierarchical modeling of carbon nanoribbon devices for CNR-FETs engineering
</H3>
<LI class="noAbstract Hover" _counted="undefined" _eventID="163"><H3>Strain Silicon Optimization for Memory and Logic in Nano-Scale CMOS
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<LI class="noAbstract Hover" _counted="undefined" _eventID="163"><H3>اين مقالات را از ieee برام دانلود کنيد يا راهنماييم کنيد که مقاله درباره فيزيک الکترونيک قطعات نيمه هادي از کجابيارم؟؟؟؟؟plzzzzzzzz
</H3>
<LI class="noAbstract Hover" _counted="undefined" _eventID="162"></H3>
The evolution of the threshold voltage distribution in an ensemble of realistic n- and p- channel bulk MOSFETs caused by charge trapping on stress generated defect states at the Si/SiO2 interface due to NBTI/PBTI is studied using 3-D statistical simulations. The simulations take into account the underlying random discrete dopant distribution in the transistors, which in conjunction with strategically positioned traps, could result in rare but dramatic changes in the transistor characteristics. Read More»
<LI class="noAbstract Hover" _counted="undefined" _eventID="162">
Advanced simulation of statistical variability and reliability in nano CMOS transistors
<LI class="noAbstract Hover" _counted="undefined" _eventID="162">Increasing CMOS device variability has become one of the most acute problems facing the semiconductor manufacturing and design industries at, and beyond, the 45 nm technology generation. Most problematic of all is the statistical variability introduced by the discreteness of charge and granularity of matter in transistors with features already of molecular dimensions . Two transistors next to each other on the chip with exactly the same geometries and strain distributions may have characteristics from each end of a wide statistical distribution. In conjunction with statistical variability [ii], negative bias temperature instability (NBTI) and/or hot carrier degradation can result in acute statistical reliability problems. It already profoundly affects SRAM design, and in logic circuits causes statistical timing problems and is increasingly leading to hard digital faults. In both cases, statistical variability restricts supply voltage scaling, adding to power dissipation problems [iii]. In this invited paper we describe recent advances in predictive physical simulation of statistical variability using drift diffusion (DD), Monte Carlo (MC) and quantum transport (QT) simulation techniques. Read More»
<LI class="noAbstract Hover" _counted="undefined" _eventID="163">
<H3>On the performance limits of emerging nano-MOS transistors: A simulation study
<LI class="noAbstract Hover" _counted="undefined" _eventID="163">
<H3>A multi-level parallel simulation approach to electron transport in nano-scale transistors
</H3>
<LI class="noAbstract Hover" _counted="undefined" _eventID="163"><H3>Hierarchical modeling of carbon nanoribbon devices for CNR-FETs engineering
</H3>
<LI class="noAbstract Hover" _counted="undefined" _eventID="163"><H3>Strain Silicon Optimization for Memory and Logic in Nano-Scale CMOS
</H3>
<LI class="noAbstract Hover" _counted="undefined" _eventID="163"><H3>اين مقالات را از ieee برام دانلود کنيد يا راهنماييم کنيد که مقاله درباره فيزيک الکترونيک قطعات نيمه هادي از کجابيارم؟؟؟؟؟plzzzzzzzz
</H3>
<LI class="noAbstract Hover" _counted="undefined" _eventID="162"></H3>
